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US 8,525,268 B2Granted
Vertical discrete device with drain and gate electrodes on the same surface and method for making the same
AssigneeMonolothic Power Systems, Inc.
InventorDonald R. Disney
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Abstract
The present technology discloses a vertical discrete device with gate and drain electrodes on the same surface and method for making the same. The vertical discrete device comprises a deep gate contact that couples the buried gate to a gate electrode which is formed on the same surface as the drain electrode. The discrete device according to the present technology can be used in co-packaging power management applications and the source electrode of the discrete device may be attached to the leadframe of the package.
Claims10
A vertical semiconductor device, comprising:
- a substrate having a first surface and a second surface opposite the first surface;
- an epitaxial layer on the first surface of the substrate, the epitaxial layer having a fourth surface in contact with the first surface of the substrate, and a third surface opposite the fourth surface;
- a source region and a gate in the epitaxial layer and adjacent to the third surface;
- a source electrode coupled to the source region and isolated from the gate;
- a drain electrode on the second surface of the substrate;
- a first gate electrode formed adjacent to the second surface of the substrate, the first gate electrode being isolated from the substrate;
- a second gate electrode adjacent to the third surface, wherein the second gate electrode is coupled to the gate and is isolated from the source region;
- and
- a deep gate contact coupling the gate to the first gate electrode.
6 more elements
Dependencies are inferred from the claim text.