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US 8,525,267 B2Granted
Device and method for forming Fins in integrated circuitry
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hsun Wang, Chih-Sheng Chang, Yi-Tang Lin, Ming-Feng Shieh
Life of this patent
Estimating the term…
Abstract
A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
Claims17
A semiconductor FinFET device, comprising:
- a plurality of gate lines formed in a first direction;
- first fin structures formed in a second direction;
- second fin structures formed perpendicular to the first fin structures;
- and
- a contact feature coupled to a first fin of the second fin structures,
- wherein the first fin of the second fin structures is coupled to a first of the first fin structures.
3 more elements
A semiconductor FinFET device, comprising:
- a plurality of gate lines;
- a first fin structure intersecting at least one of the gate lines;
- a second fin structure displaced from but coupled to an end portion of one fin of the first fin structure as an extrusion feature, the extrusion feature not being coupled to another fin structure, and
- a contact feature coupled to the extrusion feature of the second fin structure.
1 more element
A semiconductor FinFET device, comprising:
- a first set of gate lines formed in a first direction;
- a second set of gate lines formed in a second direction, wherein the first and second directions are perpendicular to each other;
- first fin structures intersecting the first set of gate lines in the second direction;
- second fin structures intersecting the second set of gate lines in the first direction;
- and
- a first contact feature coupled to two fins of the second fin structures.
3 more elements
A semiconductor FinFET device, comprising:
- a first set of gate lines formed in a first direction;
- a second set of gate lines formed in a second direction, wherein the first and second directions are perpendicular to each other;
- first fin structures of a first type intersecting the first set of gate lines in the second direction;
- second fin structures of a second type intersecting the second set of gate lines in the first direction;
- a first contact hole coupled to one or more of the first or second fin structures, and
- a third fin structure of a third type, wherein the third fin structure is displaced from but coupled to one of the first fin structures as an extrusion feature, and wherein a second contact hole is coupled to the extrusion feature of the third fin structure.
3 more elements
Dependencies are inferred from the claim text.