Transistor with buried fins
AssigneeNanya Technology Corporation
InventorsTieh-Chiang Wu, Yi-Nan Chen, Hsien-Wen Liu
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Abstract
The present invention disclosed a recessed gate transistor with buried fins. The recessed gate transistor with buried fins is disposed in an active region on a semiconductor substrate. Two isolation regions disposed in the semiconductor substrate, and sandwich the active region. A gate structure is disposed in the semiconductor substrate, wherein the gate structure includes: an upper part and a lower part. The upper part is disposed in the active region and a lower part having a front fin disposed in one of the two isolation regions, at least one middle fin disposed in the active region, and a last fin disposed in the other one of the two isolation regions, wherein the front fin are both elliptic cylindrical.
Claims12
A recessed gate transistor with buried fins, comprising:
- a semiconductor substrate having an active region therein;
- two isolation regions disposed in the semiconductor substrate, and sandwich the active region;
- a gate structure disposed in the semiconductor substrate, wherein the gate structure comprises:
- an upper part disposed in the active region;
- and
- a lower part having a front fin disposed in one of the two isolation regions, at least one middle fin disposed in the active region, and a last fin disposed in the other one of the two isolation regions, wherein the front fin and the last fin are both elliptic cylindrical, and the upper part electrically connects to the middle fin;
- a source doping region disposed in the active region at one side of the gate structure;
- and
- a drain doping region disposed in the active region at the other side of the gate structure.
Dependencies are inferred from the claim text.