Back to results
US 8,525,261 B2Granted
Semiconductor device having a split gate and a super-junction structure
AssigneeMacronix International Co., Ltd.
InventorsShyi-Yuan Wu, Wing Chor Chan, Chien-Wen Chu
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A super-junction structure is disposed within the drift region between the gate and the drain region.
Claims28
A semiconductor device, comprising:
- a source region;
- a drain region;
- a drift region between the source and drain regions;
- a split gate disposed over a portion of the drift region, and between the source and drain regions, the split gate comprising:
- a first gate oxide layer over the drift region, the first gate oxide layer having a first portion and a second portion,
- a first gate electrode layer formed over the first portion of the first gate oxide layer and not over the second portion of the first gate oxide layer,
- a second gate oxide layer formed over the second portion of the first gate oxide layer and over a portion of the first gate electrode layer, and
- a second gate electrode layer formed over the second gate oxide layer, the second gate electrode layer being in electrical contact with the first gate electrode layer;
- and
- a super junction structure disposed within the drift region between the gate and the drain region.
7 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a drain region of the first conductivity type formed over the semiconductor layer;
- a source region of the first conductivity type formed over the semiconductor layer and spaced apart from the drain region such that a drift region is formed between the drain region and the source region;
- a first gate oxide layer formed over the drift region, the first gate oxide layer having a first portion and a second portion;
- a first gate electrode layer formed over the first portion of the first gate oxide layer and not over the second portion of the first gate oxide layer;
- a second gate oxide layer formed over the second portion of the first gate oxide layer and over a portion of the first gate electrode layer;
- a second gate electrode layer formed over the second gate oxide layer, the second gate electrode layer being in electrical contact with the first gate electrode layer;
- and
- a super junction structure formed in at least a portion of the drift region, the super-junction structure including a plurality of pillars of a second conductivity type opposite the first conductivity type.
6 more elements
Dependencies are inferred from the claim text.