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US 8,525,260 B2Granted
Super junction device with deep trench and implant
AssigneeMonolithic Power Systems, Inc.
InventorsTiesheng Li, Michael R. Hsing, Deming Xiao
Life of this patent
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Abstract
RESURF effect devices with both relatively deep trenches and relatively deep implants are described herein. Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region.
Claims13
A device, comprising:
- a substrate;
- a plurality of first regions of a first conductivity type formed on the substrate;
- and
- a plurality of second regions of a second conductivity type formed on the substrate and interleaved with the plurality of first regions, wherein each of the second regions includes:
- an implant region implanted between the substrate and a trenched region;
- a conductive column of the second conductivity type formed into the trenched region;
- and
- an insulative barrier configured to insulate the conductive column from the implant region and from the first regions adjacent to the second region.
5 more elements
Dependencies are inferred from the claim text.