Double-sided semiconductor structure and method for manufacturing same
AssigneeSTMicroelectronics S.r.l.
InventorsMonica Micciche′, Antonio Giuseppe Grimaldi, Gaetano Bazzano, Nicolò Frazzetto
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Abstract
A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.
Claims22
A semiconductor structure comprising:
- a substrate of semiconductor material of a first type of conductivity;
- a first semiconductor layer of the first type of conductivity arranged in electrical contact with the substrate on a first side of the substrate;
- a second semiconductor layer of the first type of conductivity arranged in electrical contact with the substrate on a second side of the substrate;
- a first active electronic device comprising a first conduction terminal formed in the first semiconductor layer;
- a second active electronic device comprising a second conduction terminal formed in the second semiconductor layer;
- and
- a third conduction terminal common to the first active electronic device and to the second active electronic device, wherein the third conduction terminal comprises a via region extending from a surface of the second semiconductor layer at least partially into the substrate and filled with conductive material of the first type of conductivity.
A method for manufacturing a semiconductor structure comprising the steps of:
- providing a substrate of semiconductor material of a first type of conductivity and having a first side and a second side, opposite to one another;
- forming, on the first side of the substrate, a first semiconductor layer;
- forming, on the second side of the substrate, a second semiconductor layer;
- forming, in the first semiconductor layer, a first active electronic device;
- and
- forming, in the second semiconductor layer, a second active electronic device,
- wherein the step of forming the first active electronic device comprises the steps of farming at least a first conduction terminal, and the step of forming the second active electronic device comprises forming at least a second conduction terminal, the method moreover comprising the step of forming, in the second semiconductor layer and, at least partially, in the substrate a third conduction terminal, and wherein the step of forming the third conduction terminal comprises etching the second semiconductor layer and, at least partially, the substrate to form a trench and filling said trench with conductive material of the first type of conductivity.
Dependencies are inferred from the claim text.