Nonvolatile semiconductor memory device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsKenichiro Toratani, Masayuki Tanaka, Kazuhiro Matsuo
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.
Claims9
A nonvolatile semiconductor memory device, comprising:
- insulators and electrodes alternately provided above a semiconductor substrate;
- a silicon pillar penetrating the insulator and the electrode;
- a tunnel insulator surrounding a sidewall of the silicon pillar;
- a charge storage insulator surrounding a sidewall of the tunnel insulator;
- a block insulator surrounding a sidewall of the charge storage insulator;
- and
- an interface region including a metal element, the interface region being provided at one interface selected from between the sidewall of the silicon pillar and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the electrodes.
Dependencies are inferred from the claim text.