Semiconductor memory device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorHideaki Maekawa
Life of this patent
Estimating the term…
Abstract
A semiconductor memory includes a memory cell array area provided with first and second memory cells and having a first active area and a first element isolation area constituting a line & space structure, and having a floating gate electrode and a control gate electrode in the first active area, a word line contact area adjacent to the memory cell array area and having a second active area, first and second word lines with a metal silicide structure, functioning respectively as the control gate electrodes of the first and second memory cells and arranged to straddle the memory cell array area and the word line contact area. A dummy gate electrode is arranged just below the first and second word lines in the second active area.
Claims8
A semiconductor memory device, comprising:
- a semiconductor substrate including a first region and a second region located adjacent to the first region,
- the first region including a first active area sectionalized by a first element isolation area extending to a first direction,
- the second region including second active areas sectionalized by second element isolation areas extending to the first direction;
- first and second word lines extending from the first region to the second region and connecting to memory cells, said first and second word lines located parallel to each other and extending to a second direction perpendicular to the first direction
- a first insulating film provided between the first and second word lines and directly contacting to one side of the first word line and contacting to one side of the second word line, and the first insulating film including a void;
- and
- first and second contacts provided respectively corresponding to the first and second word lines in the second region,
- wherein a first bottom portion of the void on one of the second active areas is higher than a second bottom portion of the void on the second element isolation area.
Dependencies are inferred from the claim text.