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US 8,525,247 B2Granted
Non-volatile memory device having variable resistance element
AssigneeSamsung Electronics Co., Ltd.
InventorsChan-Jin Park, Hyun-Su Ju, In-Gyu Baek
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Abstract
A non-volatile memory device includes a lower molding layer, a horizontal interconnection line on the lower molding layer, an upper molding layer on the horizontal interconnection line, pillars extending vertically through the upper molding layer, the horizontal interconnection line, and the lower molding layer, and a buffer layer interposed between the pillars and the molding layers. The device also includes variable resistance material and a diode layer interposed between the pillars and the horizontal interconnection line.
Claims9
A semiconductor device comprising:
- a lower molding layer;
- a horizontal interconnection line disposed on the lower molding layer;
- an upper molding layer disposed on the horizontal interconnection line;
- a pillar extending vertically through the upper molding layer, the horizontal interconnection line, and the lower molding layer;
- a buffer layer interposed between the pillar and each of the lower and upper molding layers;
- and
- variable resistance material and a diode layer interposed between the pillar and the horizontal interconnection line.
4 more elements
Dependencies are inferred from the claim text.