Germanium compound, semiconductor device fabricated using the same, and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHye-Young Park, Myong-Woon Kim, Jin-Dong Kim, Choong-Man Lee, Jin-Il Lee
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Abstract
A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR1xR2y. “R1” is an alkyl group, and “R2” is one of hydrogen, amino group, allyl group and vinyl group. “x” is greater than zero and less than 4, and the sum of “x” and “y” is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.
Claims14
A germanium (Ge) compound having a chemical formula GeR1xR2y,
- wherein R1 is an alkyl group and R2 is an allyl group and a vinyl group,
- wherein x is greater than zero and less than 4, and
- wherein sum of x and y is equal to 4,
- with the proviso that R2 does not comprise nitrogen.
A method of forming a semiconductor device, comprising:
- supplying a germanium precursor, an antimony precursor and a tellurium precursor to a substrate to form a phase change material layer,
- wherein the germanium precursor is a germanium compound having a chemical formula GeR1xR2y,
- wherein R1 is an alkyl group,
- wherein R2 is one of hydrogen, an allyl group and a vinyl group,
- wherein x is greater than zero and less than 4, and
- wherein the sum of x and y equal to 4,
- with the proviso that R2 does not comprise nitrogen.
Dependencies are inferred from the claim text.