Back to results
US 8,525,243 B2Granted
Single gate semiconductor device
AssigneeMacronix International Co., Ltd.
InventorsCheng-Chi Lin, Shih-Chin Lien, Chin-Pen Yeh, Shyi-Yuan Wu
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a gate multiple doping regions on both sides of the gate. The gate can be shared by a transistor and a capacitor.
Claims20
A semiconductor device, comprising:
- a gate;
- first doping regions having a first doping type, the first doping regions positioned on both sides of the gate;
- second doping regions having a second doping type opposite to the first doping type, the second doping regions positioned on both sides of the gate;
- third doping regions having the first doping type, the third doping regions positioned on both sides of the gate;
- and
- fourth doping regions having the first doping type, the fourth doping regions positioned on both sides of the gate.
3 more elements
A semiconductor device, comprising:
- a gate shared by a transistor and a capacitor;
- first doping regions having a first doping type, the first doping regions positioned on both sides of the gate;
- and
- second doping regions having a second doping type opposite to the first doping type, the second doping regions positioned on both sides of the gate, wherein the second doping regions overlap source and drain regions of the transistor.
1 more element
A semiconductor device, comprising:
- a gate shared by a transistor and a capacitor;
- first doping regions having a first doping type, the first doping regions positioned on both sides of the gate;
- and
- second doping regions having a second doping type opposite to the first doping type, the second doping regions positioned on both sides of the gate;
- and
- an epitaxial layer of the second doping type, wherein the transistor and the capacitor are on the epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.