Semiconductor device and method for driving same
AssigneePanasonic Corporation
InventorsKoutarou Tanaka, Takashi Hori, Kazuhiro Adachi
Life of this patent
Estimating the term…
Abstract
The present invention is directed to an MIS type semiconductor device, including a channel layer between a semiconductor body region and a gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region. Since Vfb of the semiconductor device is equivalent to or less than a gate rated voltage Vgcc− of the semiconductor device with respect to an OFF-polarity, density of carrier charge that is induced near the surface of the semiconductor body region is kept at a predetermined amount or less with a guaranteed range of operation of the semiconductor device.
Claims10
A semiconductor device of an MIS type, comprising:
- a semiconductor body region;
- a gate insulating film;
- a channel layer provided between the semiconductor body region and the gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region;
- and
- a gate electrode provided so as to be in contact with the gate insulating film, wherein,
- a gate voltage at which a band bending of the semiconductor body region becomes zero is defined as a flatband voltage Vfb, and a rated voltage for a gate of the semiconductor device with respect to an OFF-polarity is defined as Vgcc−, such that
- Vfb of the semiconductor device is equivalent to or less than Vgcc−.
A driving method for a semiconductor device of an MIS type having a semiconductor body region, a gate insulating film, a channel layer provided between the semiconductor body region and the gate insulating film, the channel layer having an opposite semiconductor polarity to that of the semiconductor body region, and a gate electrode provided so as to be in contact with the gate insulating film, the driving method comprising:
- a step of applying a voltage of a magnitude between Vth and Vgcc− to the gate electrode,
- where a gate voltage at which a band bending of the semiconductor body region becomes zero is defined as flatband voltage Vfb, a rated voltage for a gate of the semiconductor device with respect to an OFF-polarity is defined as Vgcc−, a rated voltage for the gate of the semiconductor device with respect to an ON-polarity is defined as Vgcc, and a threshold voltage of the semiconductor device is defined as Vth;
- and
- a step of applying a voltage of a magnitude between Vth and Vgcc to the gate electrode, wherein
- Vfb of the semiconductor device is equivalent to or less than Vgcc−.
Dependencies are inferred from the claim text.