Semiconductor substrate, method of fabricating the same, method of fabricating semiconductor device, and method of fabricating image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorJoon-Young Choi
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Abstract
In an example embodiment, an image sensor includes a semiconductor layer and isolation regions disposed in the semiconductor layer. The isolation regions define active regions of the semiconductor layer. The image sensor further includes photoelectric converters disposed in the semiconductor layer and at least one wiring layer disposed over a top surface of the semiconductor layer. The image sensor also includes color filters disposed below a bottom surface of the semiconductor layer and lenses disposed below the color filters. Each lens is arranged to concentrate incoming light into an area spanned by a corresponding photoelectric converter.
Claims9
A semiconductor substrate comprising:
- a lower region including gallium arsenide, ceramic, or quartz;
- a trench region disposed on the lower region, the trench region including a plurality of trenches;
- a semiconductor layer disposed on the trench region, the semiconductor layer including silicon or silicon-germanium;
- and
- a seed layer disposed between the plurality of trenches and the semiconductor layer.
Dependencies are inferred from the claim text.