Multiplying pattern density by single sidewall imaging transfer
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Ying Zhang
Life of this patent
Estimating the term…
Abstract
A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed.
Claims9
A semiconductor device, comprising:
- pattern formed by implantation such that at least three transistors are formed within a single minimum feature size pattern such that at least three transistors are formed within a single minimum feature size achievable with lithography.
A semiconductor device, comprising:
- a substrate having transistors formed thereon, the transistors having a triple density pattern formed by implantation such that at least three transistors are formed within a single minimum feature size achievable with lithography;
- and
- the transistors of the triple density pattern having at least one of different sizes and different spacings between at least two of the three features.
Dependencies are inferred from the claim text.