Semiconductor structure having a wetting layer
AssigneeInternational Business Machines Corporation
InventorsTakeshi Nogami, Keith K. H. Wong, Chih-Chao Yang
Life of this patent
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Abstract
A semiconductor structure which includes a semiconductor substrate and a metal gate structure formed in a trench or via on the semiconductor substrate. The metal gate structure includes a gate dielectric; a wetting layer selected from the group consisting of cobalt and nickel on the gate dielectric lining the trench or via and having an oxygen content of no more than about 200 ppm (parts per million) oxygen; and an aluminum layer to fill the remainder of the trench or via. There is also disclosed a method of forming a semiconductor structure in which a wetting layer is formed from cobalt amidinate or nickel amidinate deposited by a chemical vapor deposition process.
Claims20
A semiconductor structure comprising:
- a semiconductor substrate;
- and
- a metal gate structure formed in a trench or via on the semiconductor substrate, the metal gate structure comprising:
- a gate dielectric;
- a wetting layer selected from the group consisting of cobalt and nickel on the gate dielectric lining the trench or via and having an oxygen content of no more than about 200 ppm (parts per million) oxygen;
- and
- an aluminum layer to fill the remainder of the trench or via.
A method of forming a semiconductor structure comprising:
- forming a dummy gate on a semiconductor substrate;
- forming a spacer on the dummy gate structure;
- removing the dummy gate to form a trench or via;
- depositing a gate dielectric in the trench or via;
- depositing a wetting layer selected from the group consisting of cobalt and nickel to line the trench or via, the wetting layer formed by cobalt amidinate or nickel amidinate deposited by a chemical vapor deposition process;
- and
- depositing aluminum to fill the remainder of the trench or via.
A method of forming a semiconductor structure comprising:
- forming a dummy gate on a semiconductor substrate;
- forming a spacer on the dummy gate structure;
- removing the dummy gate to form a trench or via;
- depositing a gate dielectric in the trench or via;
- depositing a wetting layer selected from the group consisting of cobalt and nickel to line the trench or via, the wetting layer having an oxygen content of no more than about 200 ppm (parts per million) oxygen and formed by depositing cobalt amidinate or nickel amidinate by a chemical vapor deposition process wherein the cobalt amidinate or nickel amidinate has the formula M(AMD)2], and the structure
- in which M is cobalt or nickel, R1, R2, R3, R1′, R2′ and R3′ may be chosen independently from hydrogen, alkyl, aryl, alkenyl, alkynyl, trialkylsilyl or fluoroalkyl groups or other non-metal atoms or groups;
- and
- depositing aluminum directly on the wetting layer to fill the remainder of the trench or via.
Dependencies are inferred from the claim text.