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US 8,525,230 B2Granted
Field-effect transistor with compositionally graded nitride layer on a silicaon substrate
AssigneeThe Regents of the University of California
InventorsHugues Marchand, Brendan J. Moran, Umesh K. Mishra, James S. Speck
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Abstract
A field effect transistor including a compositionally graded group-III nitride layer on a silicon substrate.
Claims15
A field-effect transistor comprising a group-III nitride on a silicon substrate, wherein the field-effect transistor:
- (i) is capable of supporting a current per unit of gate width of the field-effect transistor that is less than about 525 mA/mm, and
- (ii) has a transconductance per unit of gate width of the field-effect transistor that is about 100 mS/mm or less.
A field-effect transistor comprising a group-III nitride on a silicon substrate, wherein the field-effect transistor has a transconductance per unit of gate width of the field-effect transistor that is about 100 mS/mm or less.
Dependencies are inferred from the claim text.