US 8,525,228 B2 · Semiconductor on insulator (XOI) for high performance field effect transistors

Abstract

Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a target substrate, such as a Si/SiO2 substrate, thereby assembling an XOI substrate. The transfer process can be conducted through a stamping method or a bonding method. Multiple transfers can be carried out to form heterogenous compound semiconductor devices. The single-crystalline semiconductor can be II-IV or III-V compound semiconductor, such as InAs. A thermal oxide layer can be grown on the patterned single crystalline semiconductor, providing improved electrical characteristics and interface properties. In addition, strain tuning is accomplished via a capping layer formed on the single-crystalline semiconductor before transferring the single-crystalline semiconductor to the target substrate.

Claims26

Dependent claims

A method of fabricating a high performance semiconductor device, the method comprising:

growing a single-crystalline semiconductor material on a source substrate, wherein the source substrate comprises a base material and a sacrificial layer on the base material;
patterning the semiconductor material;
and
transferring the patterned semiconductor material onto a dielectric layer of a device substrate,
wherein the transferring of the patterned semiconductor material comprises bonding the source substrate having the patterned semiconductor material to the target substrate, and removing the source substrate to leave the patterned semiconductor material on the target substrate.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor on insulator (XOI) for high performance field effect transistors

Life of this patent

Semiconductor on insulator (XOI) for high performance field effect transistors

Life of this patent

Abstract

Claims26