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US 8,525,224 B2Granted
III-nitride power semiconductor device
AssigneeInternational Rectifier Corporation
InventorDaniel M Kinzer
Life of this patent
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Abstract
A III-nitride power semiconductor device that includes a first III-nitride power semiconductor device and a second III-nitride power semiconductor device formed in a common semiconductor die and operatively integrated to form a half-bridge.
Claims13
A semiconductor device comprising:
- a semiconductor body having formed therein a lateral conduction power semiconductor device, and
- a vertical conduction power semiconductor device having a lateral conductive channel and a vertical conductive path coupled to said lateral conductive channel to transmit current from said lateral conductive channel to a conductive electrode disposed on an outer surface of said semiconductor body opposite said lateral conductive channel, wherein a first power electrode and a second power electrode of said vertical conduction power semiconductor are not interdigitated;
- said lateral conduction power semiconductor device and said vertical conduction power semiconductor device sharing a continuous two dimensional electron gas (2DEG) conduction path.
A III-nitride power device comprising:
- a first III-nitride power semiconductor device and a second III-nitride power semiconductor device sharing a common III-nitride active heterojunction that includes a continuous two dimensional electron gas,
- wherein a source electrode of said first III-nitride power semiconductor device is directly connected in series to a drain electrode of said second III-nitride power semiconductor device and wherein said drain electrode and a source electrode of said second III-nitride power semiconductor device are not interdigitated.
Dependencies are inferred from the claim text.