Silicon carbide semiconductor device

A silicon carbide semiconductor device having a vertical semiconductor element with a trench gate structure comprising:

• a silicon carbide semiconductor substrate including a first or second conductive type layer and a drift layer on the first or second conductive type layer, wherein the drift layer has the first conductive type, and the silicon carbide semiconductor substrate includes a principal surface having an offset direction;
• a trench disposed on a surface of the drift layer and having a longitudinal direction;
• and
• a gate electrode disposed in the trench via a gate insulation film,
• wherein a sidewall of the trench provides a channel formation surface,
• wherein the vertical semiconductor device is configured to flow current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode, and
• wherein the offset direction of the silicon carbide semiconductor substrate is perpendicular to the longitudinal direction of the trench.