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US 8,525,222 B2Granted
Process for forming a planar diode using one mask
AssigneeVishay General Semiconductor LLC
InventorsBenson Wang, Kevin Lu, Warren Chiang, Max Chen
Life of this patent
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Abstract
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
Claims4
A method of forming a planar diode comprising:
- providing a substrate of a first conductivity type;
- depositing a layer of oxide over the substrate;
- using a mask to expose the central portion of the oxide layer for etching;
- removing the central portion of the oxide via etching;
- diffusing dopants into the substrate via window diffusion to form a single region having a uniform second conductivity type;
- plating a metal onto the window and on the opposite side of the substrate, wherein the oxide acts as a mask for the plating of the metal, and the metal is plated only onto the window and is not plated onto the oxide;
- and
- coating the remaining oxide and a portion of the plating on a side of the substrate with a passivating agent,
- wherein the planar diode is formed using only one mask.
6 more elements
Dependencies are inferred from the claim text.