Light emitting device, method of manufacturing the same, light emitting device package, and lighting system
AssigneeLG Innotek Co., Ltd.
InventorsKwang Ki Choi, Hwan Hee Jeong, Ji hyung Moon, Sang Youl Lee, June O Song, Se Yeon Jung, Tae-Yeon Seong
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Abstract
Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.
Claims18
A light emitting device comprising:
- a light emitting structure layer comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
- a plurality of oxide protrusions directly contacted with an upper surface of the second conductive semiconductor layer the plurality of oxide protrusions comprising at least one of GaO, InO, InGaO, AlInO, AlGaO, AlO and AlInGaO, the plurality of oxide protrusion include an oxide of at least a portion of the second conductive semiconductor layer;
- and
- a current spreading layer on the second conductive semiconductor layer and the plurality of oxide protrusions.
A light emitting device comprising:
- a substrate comprising at least one of a light transmitting material;
- a light emitting structure layer comprising a n-type semiconductor layer, an active layer and a p-type semiconductor layer;
- a plurality of oxide protrusions directly contacted with an upper surface of the p-type semiconductor layer the plurality of oxide protrusions comprising at least one of GaO, InO, InGaO, AlInO, AlGaO, AlO and AlInGaO, the plurality of oxide protrusion include an oxide of at least a portion of the p-type conductive semiconductor layer;
- and a current spreading layer on the p-type semiconductor layer and the oxide protrusions.
A light emitting device package comprising:
- a body;
- a first electrode layer and a second electrode layer on the body;
- a light emitting device connected electrically to the first electrode layer and the second electrode layer on the body;
- and
- a molding member surrounding the light emitting device on the body, wherein the light emitting device comprising:
- a light emitting structure layer comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
- a plurality of oxide protrusions directly contacted with an upper surface of the second conductive semiconductor layer the plurality of oxide protrusions comprising at least one of GaO, InO, InGaO, AlInO, AlGaO, AlO and AlInGaO, the plurality of oxide protrusion include an oxide of at least a portion of the second conductive semiconductor layer;
- and
- a current spreading layer on the second conductive semiconductor layer and the oxide protrusions.
Dependencies are inferred from the claim text.