Semiconductor chip assembly with post/base heat spreader with thermal via

A semiconductor chip assembly, comprising:

• a semiconductor device;
• an adhesive that includes an opening;
• a support layer;
• a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via,
• wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via includes a plated through-hole that extends from the base to the underlayer, is metallurgically bonded to the base and the underlayer and provides a thermally conductive path between the base and the underlayer and the thermal via is spaced from and laterally offset from the post and the cap and provides no electrical function;
• and a conductive trace that includes a pad, a terminal and a routing line,
• wherein the routing line provides an electrically conductive path between the pad and the terminal;
• wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap, thereby thermally connected to the post, thereby thermally connected to the base, thereby thermally connected to the thermal via and thereby thermally connected to the underlayer;
• wherein the adhesive is mounted on and extends above the base, contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad and between the base and the terminal;
• and
• wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;
• wherein the pad, the terminal and the routing line are located above the base and extend above the adhesive;
• wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer and extends below the adhesive, the cap overlaps the adhesive, the plated through-hole extends through the base, the adhesive and the support layer and the underlayer extends below the semiconductor device, the support layer and the conductive trace;
• and
• wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.

A semiconductor chip assembly, comprising:

• a semiconductor device;
• an adhesive that includes an opening;
• a support layer;
• a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via includes a plated through-hole that extends from the base to the underlayer, is metallurgically bonded to the base and the underlayer and provides a thermally conductive path between the base and the underlayer and the thermal via is spaced from and laterally offset from the post and the cap and provides no electrical function;
• a substrate that includes a dielectric layer,
• wherein an aperture extends through the substrate;
• and a conductive trace that includes a pad, a terminal and a routing line,
• wherein the routing line provides an electrically conductive path between the pad and the terminal;
• wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap, thereby thermally connected to the post, thereby thermally connected to the base, thereby thermally connected to the thermal via and thereby thermally connected to the underlayer;
• wherein the adhesive is mounted on and extends above the base, contacts the post, the base, the cap and the thermal via, is spaced from the support layer and the underlayer, extends laterally from the post to or beyond the terminal and is sandwiched between the post and the dielectric layer, between the base and the dielectric layer, between the base and the pad and between the base and the terminal;
• wherein the substrate is mounted on the adhesive and extends above the base and the dielectric layer is sandwiched between the conductive trace and the adhesive;
• wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;
• wherein the pad, the terminal and the routing line are mounted on the dielectric layer and extend above the adhesive and the dielectric layer;
• wherein the post extends into the opening and the aperture and extends above and below the aperture, the base is sandwiched between the adhesive and the support layer and extends below the adhesive and the dielectric layer, the cap contacts and overlaps the adhesive and the dielectric layer, the plated through-hole extends through the base, the adhesive, the dielectric layer and the support layer and the underlayer extends below the semiconductor device, the support layer and the conductive trace;
• and
• wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic.

A semiconductor chip assembly, comprising:

• a semiconductor device;
• an adhesive that includes an opening;
• a support layer;
• a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and the cap and provides a thermally conductive path between the base and the underlayer;
• and
• a conductive trace that includes a pad and a terminal;
• wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap and thereby thermally connected to the underlayer;
• wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;
• wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;
• wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the cap overlaps the adhesive, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad;
• and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic;
• wherein the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.

A semiconductor chip assembly, comprising:

• a semiconductor device;
• an adhesive that includes an opening;
• a support layer;
• a heat spreader that includes a post, a base, a cap, an underlayer and a thermal via, wherein (i) the post is adjacent to and integral with the base and extends above the base in an upward direction, (ii) the base covers the post in a downward direction opposite the upward direction, extends laterally from the post in lateral directions orthogonal to the upward and downward directions and is sandwiched between the post and the underlayer, (iii) the cap extends above and is adjacent to and covers in the upward direction and extends laterally from a top of the post, (iv) the underlayer extends below and is spaced from the base, covers the post in the downward direction and extends laterally beyond the post, and (v) the thermal via extends from the base to the underlayer, is spaced from and laterally offset from the post and the cap and provides a thermally conductive path between the base and the underlayer;
• and
• a conductive trace that includes a pad and a terminal;
• wherein the semiconductor device is mounted on the cap, overlaps the post, the base, the cap, the support layer and the underlayer, is electrically connected to the pad and thereby electrically connected to the terminal and is thermally connected to the cap and thereby thermally connected to the underlayer;
• wherein the adhesive is mounted on and extends above the base, extends laterally from the post to or beyond the terminal and is sandwiched between the base and the pad;
• wherein the support layer is sandwiched between the base and the underlayer, covers the post in the downward direction and extends laterally beyond the post;
• wherein the post extends into the opening, the base is sandwiched between the adhesive and the support layer, the cap overlaps the adhesive, the thermal via extends through the support layer and the underlayer extends below the semiconductor device, the support layer and the pad;
• and wherein the post, the base, the cap and the underlayer are metallic and the support layer is non-metallic;
• wherein the pad, the terminal, the cap and the thermal via extend above the post and the adhesive, the thermal via extends through the base and the adhesive, the pad and the terminal have the same thickness and are coplanar with one another and the pad and the cap have the same thickness where closest to one another, have different thickness where the cap is adjacent to the post and are coplanar with one another.