Light-emitting diode with non-metallic reflector

A light-emitting diode (LED) device comprising:

• a substrate;
• a reflective structure on a first side of the substrate, the reflective structure comprising at least a first material and a second material, the first material and the second material having different refractive indices and being non-metallic, wherein the reflective structure comprises alternating layers of about 95% porosity silicon and about 30% porosity silicon;
• a metal layer disposed over the reflective structure;
• and
• an LED structure formed over the metal layer;
• wherein:
• the LED structure includes an active layer disposed between a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers having different types of conductivity;
• and
• the reflective structure is configured to have a same type of conductivity as one of the first and second semiconductor layers disposed closer to the reflective structure.

A method of forming a light-emitting diode (LED), the method comprising:

• forming a reflective structure on a first substrate, the reflective structure being a conductive, non-metallic structure;
• forming an LED structure on a second substrate;
• forming a metal layer over the LED structure;
• bonding the metal layer to the reflective structure using a thermally conductive material other than an oxide;
• and
• removing the second substrate.