Ultraviolet light emitting diode devices and methods for fabricating the same
AssigneeXidian University
InventorsYue Hao, Ling Yang, Xiaohua Ma, Xiaowei Zhou, Peixian Li
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Abstract
A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.
Claims10
An ultraviolet light emitting diode device, wherein:
- the ultraviolet light emitting diode device comprising AlN nucleating layers, an intrinsic AlGaN epitaxial layer, an AlGaN barrier layer of a first conductivity type, an active region, a first AlGaN barrier layer of a second conductivity type, a second AlGaN barrier layer of the second conductivity type and a GaN cap layer of the second conductivity type grown in sequence on a substrate;
- a window is disposed in the GaN cap layer of the second conductivity type so as to emit the light generated;
- and
- the window penetrates through the GaN cap layer of the second conductivity type and the second AlGaN barrier layer and reaches the first AlGaN barrier layer.
An ultraviolet light emitting diode device, wherein:
- the ultraviolet light emitting diode device comprising AN nucleating layers, an intrinsic AlGaN epitaxial layer, an AlGaN barrier layer of a first conductivity type, an active region, a first AlGaN barrier layer of a second conductivity type, a second AlGaN barrier layer of the second conductivity type and a GaN cap layer of the second conductivity type grown in sequence on a substrate;
- a window is disposed in the GaN cap layer of the second conductivity type so as to emit the light generated;
- and
- the window has one of shapes of substantially cone, semi-sphere and cylindrical;
- and
- wherein:
- if the window has a substantially cone shape, the bottom of the window is located at two-thirds of the thickness of the first AlGaN barrier layer;
- if the window has a substantially semi-sphere shape, the bottom of the window is located at four-fifths of the thickness of the first AlGaN barrier layer;
- and
- if the window has a substantially cylindrical shape, the bottom of the window is at three-fourths of the thickness of the first AlGaN barrier layer.
Dependencies are inferred from the claim text.