Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device comprising:

• an n-type semiconductor layer including a nitride semiconductor;
• a p-type semiconductor layer including a nitride semiconductor;
• and
• a light emitting part provided between the n-type semiconductor layer and the p-type semiconductor layer and including:
• a first light emitting layer including a nitride semiconductor and including:
• a first well layer region including In;
• and
• a first non-well layer region juxtaposed with the first well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer, the first non-well layer having an In composition ratio lower than an In composition ratio of the first well layer region;
• a first barrier layer provided between the first light emitting layer and the p-type semiconductor layer and having a band gap energy larger than a band gap energy of the first well layer region;
• a first cap layer in contact with the first well layer region between the first well layer region and the first barrier layer;
• and
• an n-side barrier layer provided between the first light emitting layer and the n-type semiconductor layer and having a band gap energy larger than the band gap energy of the first well layer region;
• a second light emitting layer including a nitride semiconductor and including:
• a second well layer region provided between the first barrier layer and the p-type semiconductor layer and including In with an In composition ratio same as the In composition ratio of the first well layer region;
• and
• a second non-well layer region juxtaposed with the second well layer region in a plane perpendicular to the first direction and having an In composition ratio lower than the In composition ratio of the second well layer region;
• a second barrier layer provided between the second light emitting layer and the p-type semiconductor layer and having a band gap energy larger than a band gap energy of the second well layer region;
• and
• a second cap layer in contact with the second well layer region between the second well layer region and the second barrier layer,
• wherein a peak wavelength of light emitted from the light emitting part is not less than 500 nanometers.

A semiconductor light emitting device comprising:

• an n-type semiconductor layer including a nitride semiconductor;
• a p-type semiconductor layer including a nitride semiconductor;
• and
• a light emitting part provided between the n-type semiconductor layer and the p-type semiconductor layer and including:
• a first light emitting layer including a nitride semiconductor and including:
• a first well layer region including In;
• and
• a first non-well layer region juxtaposed with the first well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer, the first non-well layer having an In composition ratio lower than an In composition ratio of the first well layer region;
• a first barrier layer provided between the first light emitting layer and the p-type semiconductor layer and having a band gap energy larger than a band gap energy of the first well layer region;
• a first cap layer in contact with the first well layer region between the first well layer region and the first barrier layer;
• an n-side barrier layer provided between the first light emitting layer and the n-type semiconductor layer and having a band gap energy larger than the band gap energy of the first well layer region;
• wherein the first well layer region includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more, and
• a peak wavelength of light emitted from the light emitting part is not less than 500 nanometers.