Nitride-based semiconductor light emitting diode
AssigneeSamsung Electronics Co., Ltd.
InventorsHyuk Min Lee, Hyun Kyung Kim, Dong Joon Kim, Hyoun Soo Shin
Life of this patent
Estimating the term…
Abstract
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
Claims9
A nitride-based semiconductor LED, comprising:
- a substrate having a rectangle shape and of which a ratio of a width and a length of the substrate is equal to or more than 1.5;
- an n-type nitride semiconductor layer disposed on the substrate and composed of an n-type semiconductor material having a compositional formula of InXAlYGa1-X-YN (0≦X, 0≦Y, and X+Y≦1);
- an active layer and a p-type nitride semiconductor layer sequentially disposed on a predetermined region of the n-type nitride semiconductor layer, the active layer being composed of a semiconductor material having a compositional formula of InXAlYGa1-X-YN (0≦X, 0≦Y, and X+Y≦1), the p-type nitride semiconductor layer being composed of a p-type semiconductor material having a compositional formula of InXAlYGa1-X-YN (0≦X, 0≦Y, and X+Y≦1);
- a transparent electrode disposed on the p-type nitride semiconductor layer;
- a p-electrode pad disposed on the transparent electrode;
- and
- an n-electrode pad disposed on the n-type nitride semiconductor layer, wherein:
- the p-electrode pad, devoid of any elongated protrusion or any auxiliary electrode, is spaced apart from an outer edge line of the p-type nitride semiconductor layer by a distance of 50 to 200 μm, such that a uniform luminous effect is obtained in the entire LED, the center of the outer edge line of the p-type nitride semiconductor layer intersects with a straight line that connects a center of the p-electrode pad and a center of the n-electrode pad, and
- the n-type semiconductor layer substantially surrounds the n-electrode.
A nitride-based semiconductor LED, comprising:
- a substrate having a rectangle shape and of which a ratio of a width and a length of the substrate is equal to or more than 1.5;
- an n-type nitride semiconductor layer disposed on the substrate and composed of an n-type semiconductor material having a compositional formula of InXAlYGa1-X-YN (0≦X, 0≦Y, and X+Y≦1);
- an active layer and a p-type nitride semiconductor layer, sequentially disposed on a predetermined region of the n-type nitride semiconductor layer, the active layer being composed of a semiconductor material having a compositional formula of InXAlYGa1-X-YN (0≦X, 0≦Y, and X+Y≦1), the p-type nitride semiconductor layer being composed of a p-type semiconductor material having a compositional formula of InXAlYGa1-X-YN (0≦X, 0≦Y, and X+Y≦1);
- a transparent electrode disposed on the p-type nitride semiconductor layer;
- a p-electrode pad disposed on the transparent electrode, a center of an outer edge line of a p-type nitride semiconductor layer being intersected by a straight line that connects a center of the p-electrode pad and a center of the n-electrode pad, wherein the p-electrode pad is spaced apart from the outer edge line of the p-type nitride semiconductor layer by a distance of 50 to 200 μm, such that a uniform luminous effect is obtained in the entire LED;
- and
- an n-electrode pad that is disposed on the n-type nitride semiconductor layer,
- wherein the n-type semiconductor layer substantially surrounds the n-electrode.
Dependencies are inferred from the claim text.