Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• an n-type semiconductor layer containing a nitride semiconductor;
• a p-type semiconductor layer containing a nitride semiconductor;
• a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer,
• the light emitting portion including:
• a plurality of barrier layers stacked mutually and containing GaN, and
• a well layer provided between one of the plurality of barrier layers and another of the plurality of barrier layers, the well layer containing Inx1Ga1-x1N, where first In composition ratio x1 is an atomic ratio of In among group III elements;
• a multilayered structural body provided between the n-type semiconductor layer and the light emitting portion,
• the multilayered structural body including:
• a plurality of first layers stacked mutually and containing GaN, and
• a second layer provided between one of the plurality of first layers and another of the plurality of first layers, the second layer containing Inx2Ga1-x2N, where second In composition ratio x2 is an atomic ratio of In among group III elements, the second In composition x2 being not less than 0.6 times of the first In composition ratio x1and being lower than the first In composition ratio x1;
• and
• an n-side intermediate layer provided between the multilayered structural body and the light emitting portion and including
• a plurality of third layers stacked mutually and containing Aly1Ga1-y1N, where first Al composition ratio y1 is an atomic ratio of Al among group III elements, the first Al composition ratio y1 being higher than 0 and not higher than 0.01, and
• a fourth layer provided between one of the plurality of third layers and another of the plurality of third layers, the fourth layer contacting the one of the plurality of third layers and contacting the another of the plurality of third layers, the fourth layer containing an n-type impurity with a concentration higher than a concentration of an n-type impurity contained in the third layers, the fourth layer containing Aly2Ga1-y2N, where second Al composition ratio y2 is an atomic ratio of Al among group III elements, the second Al composition ratio being not lower than 0 and not higher than 0.01.