Semiconductor device including multiple insulating films

A semiconductor device comprising:

• a first insulating film including a first hole;
• a second insulating film over the first insulating film, the second insulating film including a second hole overlapping with the first hole,
• wherein the first hole is surrounded by the second hole, and
• wherein the second hole includes a first bottom edge and a second bottom edge, and a distance between the first hole and the first bottom edge is different from a distance between the first hole and the second bottom edge.

A semiconductor device comprising:

• a thin film transistor;
• a first insulating film over the thin film transistor, the first insulating film including a first hole;
• a second insulating film over the first insulating film, the second insulating film including a second hole overlapping with the first hole;
• and
• a conductive layer over the second insulating film, the conductive layer being in electrical contact with the thin film transistor through the first hole and the second hole,
• wherein the first hole is surrounded by the second hole, and
• wherein a center of the first hole is off a center of the second hole.

A semiconductor device comprising:

• a thin film transistor;
• a first insulating film over the thin film transistor, the first insulating film including a first hole;
• a second insulating film over the first insulating film, the second insulating film including a second hole overlapping with the first hole;
• and
• a conductive layer over the second insulating film, the conductive layer being in electrical contact with the thin film transistor through the first hole and the second hole,
• wherein the first hole is surrounded by the second hole, and
• wherein the second hole includes a first bottom edge and a second bottom edge, and a distance between the first hole and the first bottom edge is different from a distance between the first hole and the second bottom edge.