Flexible semiconductor device and method for producing the same
AssigneePanasonic Corporation
InventorsTakashi Ichiryu, Seiichi Nakatani, Koichi Hirano
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AssigneePanasonic Corporation
InventorsTakashi Ichiryu, Seiichi Nakatani, Koichi Hirano
Estimating the term…
A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.
A flexible semiconductor device comprising:
A method for producing a flexible semiconductor device which includes a gate electrode formed on a lower surface of an insulating film and a lower wiring pattern layer connected to the gate electrode, wherein a semiconductor layer opposed to the gate electrode and a source electrode and a drain electrode which are connected to the semiconductor layer are formed on an upper surface of the insulating film, the method compromising:
Dependencies are inferred from the claim text.