Thin film transistor, display device using the same, and thin film transistor manufacturing method
AssigneePanasonic Corporation
InventorEiichi Satoh
Life of this patent
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Abstract
A TFT includes a supporting substrate, a gate electrode formed on the supporting substrate, a gate insulation film formed on the substrate so as to cover the gate electrode, a first semiconductor layer formed across from the gate electrode with respect to the gate insulation film, a second semiconductor layer formed on the first semiconductor layer, and having a first thickness and a second thickness which is greater than the first thickness, an ohmic contact layer formed on the second semiconductor layer, and a source electrode and a drain electrode formed on the ohmic contact layer, spacing apart with each other.
Claims16
A thin-film transistor (TFT) comprising:
- a substrate;
- a gate electrodes disposed above said substrate;
- a gate insulation film disposed on said substrate so as to cover said gate electrode;
- a first semiconductor layer disposed across from said gate electrode with respect to said gate insulation film;
- a second semiconductor layer disposed on said first semiconductor layer, and having a first portion with a first thickness and a second portion with a second thickness, the second thickness being greater than the first thickness;
- an ohmic contact layer disposed on said second semiconductor layer;
- and
- a source electrode and a drain electrode disposed on said ohmic contact layer, said source electrode and said drain electrode being spaced apart from each other.
A method for manufacturing a TFT, said method comprising:
- forming a gate electrode above a substrate;
- forming a gate insulation film on the substrate so as to cover the gate electrode;
- forming a first semiconductor layer across from the gate electrode with respect to the gate insulation film;
- forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a first portion with a first thickness and a second portion with a second thickness, the second thickness being greater than the first thickness;
- forming an ohmic contact layer on the second semiconductor layer;
- and
- forming, on the ohmic contact layer, a source electrode and a drain electrode being spaced apart from each other.
Dependencies are inferred from the claim text.