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US 8,525,164 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorKi-Beom Choe
Life of this patent
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Abstract
A semiconductor device includes a conductive layer formed in the junction region and a boundary layer arranged to wrap a side and a bottom of the conductive layer.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming a recess pattern by etching a substrate;
- forming a boundary layer over a surface of a resultant structure including the recess pattern, wherein the boundary layer comprises an organic semiconductor;
- forming a conductive layer over the boundary layer to fill a remaining portion of the recess pattern;
- performing a planarization process to expose an upper surface of the substrate;
- and
- forming a gate over the substrate.
3 more elements
Dependencies are inferred from the claim text.