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US 8,525,162 B2Granted
Method of isolating nanowires from a substrate
AssigneeIntel Corporation
InventorsBenjamin Chu-Kung, Uday Shah, Ravi Pillarisetty, Been-Yih Jin, Marko Radosavljevic, Willy Rachmady
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Abstract
A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate.
Claims16
A device, comprising:
- a plurality of fins on a silicon substrate;
- an oxide layer formed within each of the plurality of fins, wherein a portion of the fin resides above the oxidized portion and a portion of the fin resides below the oxidized portion;
- and
- a nanowire formed on each of the plurality of fins adjacent to the portion of the fins residing above the oxidized portion of the fins.
1 more element
A system, comprising:
- a processor having a plurality of transistors formed on a semiconductor substrate, wherein the plurality of transistors comprise:
- a plurality of fins on a silicon substrate;
- an oxide layer formed within each of the plurality of fins, wherein a portion of the fin resides above the oxidized portion and a portion of the fin resides below the oxidized portion;
- and
- a nanowire formed on each of the plurality of fins adjacent to the portion of the fins residing above the oxidized portion of the fins;
- and
- a removable storage media.
4 more elements
Dependencies are inferred from the claim text.