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US 8,525,151 B2Granted
Apparatus and methods for improving parallel conduction in a quantum well device
AssigneeIntel Corporation
InventorsRavi Pillarisetty, Mantu Hudait, Been-Yih Jin, Benjamin Chu-Kung, Robert Chau
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Abstract
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
Claims18
A quantum well device, comprising:
- a substrate comprising a first material;
- a first P-N junction on the substrate, the first P-N junction comprising the first material;
- a buffer layer on the first P-N junction;
- a delta doped large bandgap stack on the buffer layer, the delta doped large bandgap stack comprising a second material;
- and
- a narrow bandgap layer on the delta doped large bandgap stack.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- and
- a delta doped large bandgap stack on the P-N junction superlattice;
- wherein the first P-N junction comprises a positively-doped portion adjacent the substrate and a negatively-doped portion adjacent the buffer layer.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- and
- a delta doped large bandgap stack on the P-N junction superlattice;
- wherein the buffer layer comprises a graded layer having a lattice sizing of the first P-N junction proximate the first P-N junction.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- and
- a delta doped large bandgap stack on the P-N junction superlattice;
- wherein the first P-N junction comprises a first material and the second P-N junction comprises the second material.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- a delta doped large bandgap stack on the P-N junction superlattice;
- and
- a second buffer layer on the second P-N junction, wherein the second buffer layer comprises a graded layer having a first lattice sizing of the first P-N junction proximate the first P-N junction and a second lattice sizing of the second P-N junction proximate the second P-N junction.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- a delta doped large bandgap stack on the P-N junction superlattice;
- and
- a second buffer layer on the second P-N junction, wherein the second P-N junction comprises a positively-doped portion adjacent the buffer layer and a negatively-doped portion adjacent the second buffer layer.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- and
- a delta doped large bandgap stack on the P-N junction superlattice;
- wherein the first P-N junction comprises silicon and the second P-N junction comprises germanium.
3 more elements
A quantum well device, comprising:
- a substrate;
- a P-N junction superlattice on the substrate;
- a buffer layer between a first P-N junction and a second P-N junction of the P-N junction superlattice;
- a delta doped large bandgap stack on the P-N junction superlattice;
- and
- a narrow bandgap layer on the delta doped large bandgap stack.
3 more elements
Dependencies are inferred from the claim text.