Semiconductor light emission device for preventing a regional concentration phenomenon of a current flow and improving the reliability

A semiconductor light emission device comprising:

• a substrate;
• a first n-type clad layer formed on the substrate;
• a current concentration preventing pattern formed in a mesh net shape and on the first n-type clad layer;
• a second n-type clad layer formed on the first n-type clad layer loaded with the current concentration preventing pattern;
• an active layer and a p-type clad layer sequentially formed on the second n-type clad layer;
• an n-type electrode formed on a part of the second n-type clad layer which is exposed by partially etching the p-type clad layer and active layer;
• and
• a p-type electrode formed on the p-type clad layer,
• wherein the current concentration preventing pattern is formed in a double layer structure which includes a first layer formed from one material of SiO and SiN and on the substrate, and a second layer formed from a metal material and on the first layer, and wherein a part of the current concentration preventing pattern comes in surface contact with the n-type electrode.