Solid state lighting devices without converter materials and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsZaiyuan Ren, Thomas Gehrke
Life of this patent
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Abstract
Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.
Claims10
A solid state lighting (SSL) device, comprising:
- a substrate material;
- a first semiconductor material on the substrate material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials, the active region having a first sub-region and a second sub-region proximate the first sub-region, the first sub-region is configured to produce a first emission, the second sub-region is configured to produce a second emission different then the first emission;
- the first and second sub-regions include first and second GaN/InGaN MQWs individually having a plurality of InGaN materials with corresponding indium concentrations;
- and
- the indium concentrations of at least one of the first and second GaN/InGaN MQWs increases or decreases continuously along a thickness direction.
A solid state lighting (SSL) device, comprising:
- a substrate material;
- a first semiconductor material at the substrate material;
- a second semiconductor material spaced apart from the first semiconductor material;
- and
- an active region between the first and second semiconductor materials including -
- a first sub-region;
- a second sub-region proximate the first sub-region,
- wherein at least one of the first or second sub-regions comprises a first InGaN bulk material having a first indium concentration proximate a first areas and a second indium concentration different than the first indium concentration proximate a second areas.
Dependencies are inferred from the claim text.