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US 8,525,145 B2Granted
Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same
AssigneeMicron Technology, Inc.
InventorJun Liu
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Abstract
Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width less than a width of a second portion of the phase change material layer. The first electrode, second electrode and phase change material layer may be oriented at least partially along a same horizontal plane.
Claims12
A processor system comprising:
- a processor coupled to a memory device, the memory device comprising:
- a plurality of memory elements, at least two memory elements comprising:
- a phase change material, and
- first and second electrodes at opposing ends of the phase change material along a horizontal plane;
- a dielectric material over the at least two memory elements;
- a conductive interconnect within the dielectric material, the conductive interconnect in contact with the second electrodes of the at least two memory elements;
- wherein a width of a first portion of the phase change material located between the first and second electrodes is less than each of a width of a second portion of the phase change material located adjacent the first electrode and a width of a third portion of the phase change material located adjacent the second electrode.
4 more elements
A processor system comprising:
- a processor coupled to a memory device, the memory device comprising:
- a plurality of memory elements, at least two memory elements comprising:
- a phase change material, and
- first and second electrodes at opposing ends of the phase change material along a horizontal plane;
- a dielectric material over the at least two memory elements;
- a conductive interconnect within the dielectric material, the conductive interconnect in contact with the second electrodes of the at least two memory elements;
- wherein the phase change material is configured such that a programmable volume of the phase change material is spaced apart from the first and second electrodes.
4 more elements
A processor system comprising:
- a processor coupled to a memory device, the memory device comprising:
- a plurality of memory elements, at least one memory element comprising:
- a substrate,
- first and second electrodes, each located on a same horizontal plane that is parallel to the substrate;
- first and second dielectric materials between the first and second electrodes;
- and
- a planar phase change material between the first and second electrodes, located on the horizontal plane and vertically disposed between and in contact with the first and second dielectric materials such that the first and second dielectric materials and the phase change material form a stack, the first electrode being formed on a first sidewall of the stack and the second electrode being formed on a second sidewall of the stack, the stack having at least first, second and third portions, the first portion having a width less than the widths of the second and third portions,
- wherein the second portion is in contact with the first electrode and the third portion is in contact with the second electrode, wherein the first portion is between the second and third portions, wherein the second portion is between the first electrode and the first portion, and wherein the third portion is between the second electrode and the first portion, such that a programmable volume of the phase change material is not in contact with the first or second electrodes.
5 more elements
Dependencies are inferred from the claim text.