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US 8,525,142 B2Granted
Non-volatile variable resistance memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsEl Mostafa Bourim, Eun-Hong Lee, Choong-Rae Cho
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Abstract
A non-volatile variable resistance memory device and a method of fabricating the same are provided. The non-volatile variable resistance memory device may include a lower electrode, a buffer layer on the lower electrode, an oxide layer on the buffer layer and an upper electrode on the oxide layer. The buffer layer may be composed of an oxide and the oxide layer may have variable resistance characteristics.
Claims12
A non-volatile variable resistance memory device comprising:
- a lower electrode;
- a buffer layer formed directly on the lower electrode;
- an oxide layer on the buffer layer;
- and an upper electrode on the oxide layer, wherein the buffer layer is composed of Mn oxide, the work function of the buffer layer being higher than that of the lower electrode, and wherein the oxide layer is composed of Ni oxide or Cu oxide.
1 more element
A method of fabricating a non-volatile variable resistance memory device comprising:
- forming a buffer layer on a lower electrode;
- forming an oxide layer on the buffer layer;
- and forming an upper electrode on the oxide layer, wherein forming the buffer layer includes forming the buffer layer composed of Mn oxide, the work function of the buffer layer being higher than that of the lower electrode, and wherein forming the oxide layer includes forming Ni oxide.
Dependencies are inferred from the claim text.