Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera

A method for manufacturing a solid-state image pickup device having a plurality of pixels integrated on a light-receiving surface, the method comprising the steps of:

• forming (a) photodiodes in pixel regions serving as the light-receiving surface of a semiconductor substrate, the photodiodes being partitioned on a pixel basis, and (b) signal transferring portions for reading signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges;
• forming insulating films over the semiconductor substrate, the insulating films covering the photodiodes;
• forming concave portions in portions of the insulating films above the photodiodes;
• filling the concave portions with core layers, each core layer comprising an inorganic substance that fills its concave portion and a metal oxide distributed within the inorganic substance;
• and
• forming color filters above the core layers.

A solid-state image pickup device having a plurality of pixels integrated on a light-receiving surface, said device comprising:

• photodiodes (a) which are disposed in pixel regions serving as the light-receiving surface of a semiconductor substrate and (b) which are partitioned on a pixel basis;
• signal transferring portions (a) which are disposed on the semiconductor substrate and (b) which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges;
• insulating films disposed over the semiconductor substrate and covering the photodiodes;
• concave portions disposed in portions of the insulating films above the photodiodes;
• core layers disposed within the concave portions and filling the concave portions, each core layer comprising an inorganic substance that fills its concave portion and a metal oxide distributed within the inorganic substance;
• a planarizing resin layer over the core layer, the planarizing resin layer being in contact with the core layer;
• and
• color filters disposed on the planarizing resin layer.

A method for manufacturing a solid-state image pickup device having a plurality of pixels integrated on a light-receiving surface, the method comprising the steps of:

• forming (a) photodiodes in pixel regions serving as the light-receiving surface of a semiconductor substrate, the photodiodes being partitioned on a pixel basis, and (b) signal transferring portions for reading signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges;
• forming insulating films on the semiconductor substrate, the insulating films covering the photodiodes;
• forming concave portions in portions of the insulating films above the photodiodes;
• filling the concave portions with core layers, each core layer comprising an inorganic substance that fills its concave portion;
• and a metal oxide distributed within the inorganic substance;
• and
• forming color filters above the core layers.