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US 8,525,021 B2Granted
Photovoltaic devices including heterojunctions
AssigneeFirst Solar, Inc.
InventorDavid Eaglesham
Life of this patent
Estimating the term…
Abstract
A photovoltaic cell can include a heterojunction between semiconductor layers. The first semiconductor layer can include a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer. A second semiconductor layer can include a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact.
Claims8
A photovoltaic device comprising:
- a transparent conductive layer on a substrate;
- a first semiconductor layer including an n-type III-V compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer;
- a second semiconductor layer including a p-type II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact, wherein a rectifying heterojunction is formed between the III-V and II-VI compound semiconductors;
- and
- an interfacial layer between the first semiconductor layer and the second semiconductor layer that enhances the rectifying heterojunction between the III-V and II-VI compound semiconductors, wherein the interfacial layer includes cadmium zinc oxide.
2 more elements
A system for generating electrical energy comprising:
- a multilayered photovoltaic cell including:
- a transparent conductive layer on a substrate,
- a first semiconductor layer including an n-type III-V compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer,
- a second semiconductor layer including a p-type II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal electrode, wherein a rectifying heterojunction is formed between the III-V and II-VI compound semiconductors, and
- an interfacial layer that enhances the rectifying heterojunction between the III-V and II-VI compound semiconductors, wherein the interfacial layer includes cadmium zinc oxide;
- a first electrical connection connected to the transparent conductive layer;
- and
- a second electrical connection connected to the back metal electrode, the back metal electrode being adjacent to the second semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.