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US 8,524,619 B2Granted
Method for fabricating semiconductor device including performing oxygen plasma treatment
AssigneeSumitomo Electric Device Innovations, Inc.
InventorMasahiro Nishi
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Abstract
A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm2.
Claims13
A method for fabricating a semiconductor device comprising
- performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm2, wherein a conductive layer is formed on a surface of the nitride semiconductor layer by the oxygen plasma treatment,
- forming a silicon nitride layer on the nitride semiconductor layer,
- forming an opening in the silicon nitride layer so that a part of the surface of the nitride semiconductor layer is exposed through the opening,
- forming a gate electrode on an exposed surface of the semiconductor layer.
1 more element
Dependencies are inferred from the claim text.