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US 8,524,618 B2Granted
Hafnium tantalum oxide dielectrics
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.
Claims20
A method comprising:
- forming a dielectric including hafnium tantalum oxide (HfxTayOz, x>0, y>0, z>0);
- and
- forming the hafnium tantalum oxide by a monolayer or partial monolayer sequencing process including conducting one or more cycles of the monolayer or partial monolayer sequencing process to form hafnium tantalum oxide in each cycle such that the monolayer or partial monolayer sequencing process in each cycle includes:
- pulsing a precursor containing hafnium in a first sequence of the cycle;
- and pulsing a precursor containing tantalum in a second sequence of the cycle, the second sequence being a non-overlapping sequence with respect to the first sequence wherein the dielectric is formed using tantalum ethoxide as a precursor.
2 more elements
A method comprising:
- forming a dielectric including hafnium tantalum oxide (HfxTayOz, x>0, y>0, z>0);
- and forming the hafnium tantalum oxide by a monolayer or partial monolayer sequencing process including conducting a plurality of cycles of the monolayer or partial monolayer sequencing process to form hafnium tantalum oxide in each cycle such that the monolayer or partial monolayer sequencing process in each cycle includes:
- pulsing a precursor containing hafnium in a first sequence of the cycle;
- and pulsing a precursor containing tantalum in a second sequence of the cycle, the second sequence being a non-overlapping sequence with respect to the first sequence;
- and performing a cycle including substituting a sequence of a dopant for a tantalum sequence or a hafnium sequence, forming the hafnium tantalum oxide containing a dopant
- wherein the dielectric is formed using tantalum ethoxide as a precursor.
3 more elements
A method comprising:
- forming a dielectric including a plurality of different materials including hafnium tantalum oxide (HfxTayOz, x>0, y>0, z>0);
- and forming the hafnium tantalum oxide by a monolayer or partial monolayer sequencing process including conducting a plurality of cycles of the monolayer or partial monolayer sequencing process to form hafnium tantalum oxide in each cycle such that the monolayer or partial monolayer sequencing process in each cycle includes:
- pulsing a precursor containing hafnium in a first sequence of the cycle;
- and pulsing a precursor containing tantalum in a second sequence of the cycle, the second sequence being a non-overlapping sequence with respect to the first sequence wherein the dielectric is formed using tantalum ethoxide as a precursor.
1 more element
Dependencies are inferred from the claim text.