Methods for manufacturing dielectric films
AssigneeCanon Anelva Corporation
InventorsTakashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Abstract
A method for manufacturing a dielectric film having a high dielectric constant is provided. The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0; and annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more.
Claims12
A method for forming, on a substrate, a dielectric film comprising a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, the method comprising the steps of:
- forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0;
- and
- annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase including a cubic crystal.
A non-transitory computer readable recording medium having a manufacturing program of a dielectric film for forming, on a substrate, a dielectric film comprising a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, wherein the program causes a computer to execute the processes of:
- forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0;
- and
- annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more.
A non-transitory computer readable recording medium having a manufacturing program of semiconductor device for manufacturing a semiconductor device having a dielectric film comprising a metal oxide containing O and elements A and B as an insulating film, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, wherein the program causes a computer to execute the processes of:
- forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0;
- and
- annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more.
Dependencies are inferred from the claim text.