Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer

A method of fabricating a semiconductor device, the method comprising:

• forming a crosslinked porous dielectric layer on a substrate with a first UV curing process and a second UV curing process, wherein the first UV curing process includes irradiating a first UV light including broadband wavelengths in which wavelengths being equal to or less than 280 nm are equal to or less than 15% of a first total intensity of the first UV light, and the second UV curing process includes irradiating a second UV light including broadband wavelengths in which wavelengths being equal to or less than 280 nm are equal to or more than 15% of a second total intensity of the second UV light;
• forming an opening in the crosslinked porous dielectric layer;
• forming a metal interconnection in the opening;
• and
• forming a capping layer on the crosslinked porous dielectric layer and the metal interconnection.

A method of fabricating a hardened porous dielectric layer, the method comprising:

• forming a dielectric layer on a substrate, the dielectric layer containing porogens;
• removing the porogens from the dielectric layer with a first UV light to transform the dielectric layer into a porous dielectric layer, the first UV light including broadband wavelengths in which wavelengths equal to or less than 280 nm are no more than 15% of a first total intensity of the first UV light;
• and
• generating crosslinks in the porous dielectric layer with a second UV light to transform the porous dielectric layer into a crosslinked porous dielectric layer, the second UV light including broadband wavelengths in which wavelengths equal to or less than 280 nm are at least 15% of a second total intensity of the second UV light.