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US 8,524,614 B2Granted
III-V compound semiconductor material passivation with crystalline interlayer
AssigneeInternational Business Machines Corporation
InventorsKuen-Ting Shiu, Dechao Guo, Shu-Jen Han, Edward W. Kiewra, Masaharu Kobayashi
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Abstract
The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure.
Claims17
A method of fabricating a semiconductor structure, said method comprising:
- forming a single crystal III-V compound semiconductor material layer on an upper surface of a III-V compound semiconductor substrate;
- forming a crystalline interlayer on an upper surface of the single crystal III-V compound semiconductor material layer, wherein said crystalline interlayer is selected from a layer consisting essentially of Al, a layer consisting essentially of In, or a layer consisting essentially of Ga;
- and
- forming a high k dielectric material layer on an upper surface of the crystalline interlayer.
1 more element
Dependencies are inferred from the claim text.