Method of fabricating semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Inada, Mitsuhiro Omura, Hisataka Hayashi
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AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Inada, Mitsuhiro Omura, Hisataka Hayashi
Estimating the term…
An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.
A method of fabricating a semiconductor device, comprising:
A method of fabricating a semiconductor device, comprising:
Dependencies are inferred from the claim text.