Method for forming fine pattern of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorYoung-Kyun Jung
Life of this patent
Estimating the term…
Abstract
A method for forming fine pattern includes sequentially forming a first thin film and a second thin film over a target layer for patterning, forming a partition over the second thin film, removing the partition after forming spacers on sidewalls of the partition, forming first pattern of the second thin film by etching the second thin film of a first region and the second thin film of a second region while exposing the spacers, forming second pattern of the second thin film by using the spacers as masks and etching the first pattern of the second thin film in the first region, forming first thin film pattern by using the first and second patterns of the second thin film as masks in the first and second regions and etching the first thin film, and etching the pattern target layer.
Claims14
A method for forming a fine pattern of a semiconductor device, comprising:
- sequentially forming a first thin film and a second thin film over a target layer for patterning;
- forming a partition over the second thin film;
- removing the partition after forming spacers on sidewalls of the partition;
- forming a first pattern of the second thin film by etching the second thin film of a first region and the second thin film of a second region while exposing the spacers simultaneously;
- forming a second pattern of the second thin film having a finer line width than the first pattern by using the spacers as a mask and etching the first pattern of the second thin film in the first region;
- forming a first thin film pattern by using the first pattern and the second pattern of the second thin film as masks in the first and second regions and etching the first thin film;
- and
- etching the pattern target layer by using the first pattern and the second pattern of the second thin film as masks.
Dependencies are inferred from the claim text.