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AssigneeMitsubishi Electric Corporation
InventorsKenichiro Kurahashi, Hidetoshi Koyama, Kazuyuki Onoe
Estimating the term…
A method of manufacturing a semiconductor device includes forming an insulating film on a surface of a semiconductor layer, forming a resist on a surface of the insulating film, the resist having an opening, forming a hardened layer on an inner circumference of the resist by attaching a pattern shrinking agent to the resist, the pattern shrinking agent undergoing a cross-linking reaction with the resist, etching the insulating film using the resist and the hardened layer as masks, removing the hardened layer, and forming a metal layer on a surface of the semiconductor layer, on a surface of the insulating film, and on a surface of the resist. The method further includes removing the resist and the portion of the metal layer on the surface of the resist by lift-off.
A method of manufacturing a semiconductor device, comprising:
A method of manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Of electrodes having a conductor capacitively coupled to a semiconductor by an insulator: the insulator being formed after the semiconductor body,…
Field-effect transistors [FET]: manufacture or treatment
Gate electrodes for field-effect devices: for FETs
Having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs: having wide bandgap…
About 5 years 2 months of term left · ends 22 Dec 2031 (estimated)
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device having a field plate structure.
2. Background Art
FIG. 1 is a flowchart showing a method of manufacturing a semiconductor device in accordance with a first embodiment of the present invention;
FIG. 2 is a diagram showing an insulating film formed on the surface of a semiconductor layer, which is formed on the surface of a substrate;
FIG. 3 is a diagram showing a resist formed on the surface of the insulating film;
FIG. 1 is a flowchart showing a method of manufacturing a semiconductor device in accordance with a first embodiment of the present invention. The method of manufacturing a semiconductor device in accordance with the first embodiment will be described with reference to FIG. 1. First, an insulating film is formed on the surface of a semiconductor layer (step 10). This step 10 will be described with reference to FIG. 2. FIG. 2 is a diagram showing an insulating film 34 formed on the surface of a semiconductor layer 32, which is formed on the surface of a substrate 30. The substrate 30 is formed of SiC, and the semiconductor layer 32 is formed of GaN/AlGaN. The insulating film 34 on the surface of the semiconductor layer 32 is formed of SiN.
Next, a resist is formed on the surface of the insulating film 34 (step 12). This step 12 will be described with reference to FIG. 3. FIG. 3 is a diagram showing a resist 36 formed on the surface of the insulating film 34. The resist 36 contains a material which becomes acidic when exposed to light.
An opening is then formed in the resist 36 (step 14). This step 14 will be described with reference to FIG. 4. FIG. 4 is a diagram showing the opening formed in the resist. Specifically, in step 14, the portion of the resist 36 where the opening is to be formed is exposed to light, and then the resist is developed, leaving an apertured, or annular, resist 36a (having the opening formed therein). It should be noted that the inner circumferential portion of the apertured resist 36a still contains some acid components, although the portion of the resist 36 that was directly exposed to light has been removed by the developing process.