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US 8,524,597 B2Granted
Methods for forming planarized hermetic barrier layers and structures formed thereby
AssigneeIntel Corporation
InventorsSean W. King, Hui Jae Yoo
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Abstract
Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a conductive material in an interconnect opening within an interlayer dielectric material that is disposed on a substrate, forming a low density dielectric material on a surface of the dielectric layer and on a surface of the conductive material, and forming a high density dielectric barrier layer on the low density dielectric layer.
Claims10
A method comprising:
- forming a conductive material that is configured to include at least one of a dopant surface interface layer, a hydride surface interface layer, and a metal cap, the conductive material is formed in an interconnect opening within an interlayer dielectric material that is disposed on a substrate;
- forming a low density dielectric material on a surface of the interlayer dielectric layer and on a surface of the conductive material;
- and
- forming a high density dielectric barrier layer on the low density dielectric layer.
1 more element
Dependencies are inferred from the claim text.