Solid-state imaging device, method for manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorHiroshi Horikoshi
Life of this patent
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Abstract
A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface.
Claims7
A method for manufacturing a solid-state imaging device, the method comprising:
- forming pixels that receive incident light in a pixel array area of a substrate;
- forming pad electrodes in a peripheral area located around the pixel array area of the substrate;
- forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component;
- forming a coated film that covers upper surfaces of the carbon-based inorganic films;
- and
- forming an opening above the connection surface of each of the pad electrodes to expose the connection surface,
- wherein the opening formation includes
- forming a resist pattern on an upper surface of the coated film, the resist pattern having openings corresponding to the connection surfaces and covering portions other than the connection surfaces,
- etching the coated film by using the resist pattern as a mask and the carbon-based inorganic films as etching stopper films to expose the upper surfaces of portions of the carbon-based inorganic films that correspond to the connection surfaces, and
- performing ashing on the resist pattern and the portions of the carbon-based inorganic films that correspond to the connection surfaces to simultaneously remove the resist pattern and the portions of the carbon-based inorganic films that correspond to the connection surfaces.
Dependencies are inferred from the claim text.