Method of manufacturing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorTakeyoshi Masuda
Life of this patent
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Abstract
A method of manufacturing a MOSFET includes the steps of preparing a substrate with an epitaxial growth layer made of silicon carbide, performing ion implantation into the substrate with the epitaxial growth layer, forming a protective film made of silicon dioxide on the substrate with the epitaxial growth layer into which the ion implantation was performed, and heating the substrate with the epitaxial growth layer on which the protective film was formed to a temperature range of 1600° C. or more in an atmosphere containing gas including an oxygen atom.
Claims5
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a substrate, having a main surface, made of silicon carbide;
- performing ion implantation into said substrate;
- forming a protective film made of silicon dioxide on said main surface of said substrate into which said ion implantation had been performed;
- and
- heating said substrate and said protective film formed thereon to a temperature range of 1600° C. or more in an oxygen gas atmosphere, or in an atmosphere containing oxygen gas and argon gas and including an impurity as the remainder.
Dependencies are inferred from the claim text.